Ready for the future: Samsung unveils a next-generation chip designed for AI

Artificial intelligence is generating increasingly large volumes of data, forcing storage companies to find solutions. Samsung aims to meet this demand with its V10 BV-NAND chip. The chip marks a major milestone by surpassing 400 stacked layers.Its goal: to meet the needs of future AI systems and applications.

Samsung unveils a chip that stacks more than 400 layers

At the Future of Memory and Storage (FMS) show, Samsung unveiled a new storage chip named V10 BV-NAND, designed for the AI era and featuring 10th-generation vertical NAND flash memory. The chip’s distinguishing feature lies in its BV-NAND architecture, which is based on a new die stacking technology. Indeed, it stacks more than 400 layers, compared with approximately 286 for the V9 generation, allowing storage density to increase by approximately 58% compared with V9 NAND memory. This therefore represents a significant technological leap in NAND memory. Notably, Samsung claims to be the first company in the industry to adopt this type of architecture.

A chip designed for the AI era

Compared with the previous generation, the V10 BV-NAND chip delivers better read, write, and input-output (I/O) performance, while consuming less energy. It is therefore designed to provide the high-capacity storage needed for AI-intensive workloads, particularly in data centers. In other words, it meets the needs of AI servers that require high-capacity NAND storage solutions.

More precisely, this chip anticipates the needs of future AI systems and applications, which are becoming increasingly complex and resource-intensive. Samsung thus aims to strengthen its position in the race for high-density NAND. At the time of writing, Samsung has not specified a release date for its V10 BV-NAND chips. Nevertheless, they are expected to be launched before the V11 NAND flash chips, which are slated for sometime in 2027.

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Source: Samsung